TS4405P Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Single P-Channel 1.8V Specified MicroSURF™

PRELIMINARY DATA SHEET
For information only
TS4405P - Single P-Channel 1.8V Specified MicroSURF™
General Description
Taiwan Semiconductor’s new low cost,
state of the art MicroSURF™ lateral
MOSFET process technology in chipscale
bondwireless packaging minimizes PCB
space and RDS(ON) plus provides an ultra-
low Qg X RDS(ON) figure of merit.
Features
• -4.9A, -12V RDS(ON) = 50mΩ at -4.5 Volts
• -4.4A, -12V RDS(ON) = 70mΩ at -2.5 Volts
• -4.0A, -12V RDS(ON) = 90mΩ at -1.8 Volts
• Low profile package: less than 0.8mm height
when mounted on PCB.
• Occupies only 1.21 mm² of PCB area.
Less than 30% of the area of a SC-70.
• Excellent thermal characteristics.
• Lead free solder bumps available.
MicroSURF™ for Load Switching
and PA Switch
Patent Pending
S
S
D
G
Bump Side View
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Symbol Parameter
Ratings
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
-12
+8
-4.9
-10
1.5
-55 to +150
Units
V
V
A
W
ºC
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJR
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
1
85
°C/W
20
1.8
6/8/03 Rev0