TS4148RYG_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 500mW High Speed SMD Switching Diode

CREAT BY ART
Small Signal Product
TS4148 RYG
Taiwan Semiconductor
500mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin/leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free and RoHS compliant
- Halogen free
MECHANICAL DATA
- Case: 0805 (Ceramics)
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by white cathode band
- Weight: 0.006g (approximately)
0805 (Ceramics)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Non-repetitive peak reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Mean forward current
P_D
500
V_RSM
100
V_RRM
75
I_FRM
300
I_O
150
Non-repetitive peak forward surge current
Tp = 1s square waveform
Tp = 8.3ms single half sine waveform
I_FSM
0.5
2.0
Thermal resistance form junction ambient
Junction and storage temperature range
(Note 1)
R_θJA
T_J, T_STG
375
- 55 to +175
PARAMETER
SYMBOL
Reverse breakdown voltage
Forward voltage
Reverse leakage current
(Note 2)
I_F=100mA
V_R=20V
V_R=75V
V_(BR)
V_F
I_R
Junction capacitance
Reverse recovery time
V_R=0, f=1.0MHz
C_J
(Note 3)
t_rr
Note: 1 Valid provided that electrodes are kept at ambient temperature
Note: 2 Test Condition: I_R=100μA
Note: 3 Test Condition: I_F=10mA, I_R=1mA, R_L=100Ω
MIN
-
-
-
-
MAX
75
1
25
5
4
4
UNIT
mW
V
V
mA
mA
A
℃/W
o_C
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1407005
Version: L14