TS4148RWG_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 350 mW High Speed SMD Switching Diode

Small Signal Product
TS4148 RWG
Taiwan Semiconductor
350 mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin / leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free version and RoHS compliant
- Halogen free
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 6 mg (approximately)
1005
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak
Forward Surge Current
Pulse Width=1μs
Pulse Width=1ms
Thermal Resistance
(Note 1)
Junction and Storage Temperature Range
P_D
V_RSM
V_RRM
I_FRM
I_O
I_FSM
R_θJA
T_J , T_STG
350
100
75
300
150
4.0
1.0
500
-40 to +125
PARAMETER
SYMBOL
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
(Note 2)
I_F=50mA
V_R=20V
V_R=75V
V_R=0, f=1.0MHz
V_(BR)
V_F
I_R
C_J
Reverse Recovery Time
(Note 3)
t_rr
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Test condition: I_R=100μA
Note 3: Test condition: I_F=I_R=30mA, R_L=100Ω, I_RR=3mA
MIN
-
-
-
-
MAX
75
1.0
25
2.5
4.0
4
UNIT
mW
V
V
mA
mA
A
o_C/W
o_C
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1412021
Version: E14