TS4148 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 0.3 AMPS High Speed Switching Diode

TS4148
0.5AMPS High Speed Switching Diode
Features
For surface mounted application
Low forward voltage drop
High Current capability
Fast switching for high efficiency
High surge current capability
Chip version in 1206 and 0805
High temperature soldering:
260^oC / 10 secondsat terminals
Mechanical Data
Item
L
W
T
C
1206
0.135(3.40)
0.119(3.0)
0.07(1.70)
0.054(1.30)
0.038(0.95)
0.03(0.75)
0.03(0.75)
0.014(0.35)
0805
0.088(2.20)
0.072(1.8)
0.058(1.45)
0.042(1.05)
0.038(0.95)
0.03(0.75)
0.026(0.65)
0.01(0.25)
Cases: 0805, 1206
Terminals: Pure tin plated lead free,
Polarity: indicated by cathode arrow
Packaging: 8 mm tape per EIA STD
RS-481
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
0805
1206
Maximum Repetitive Peak Reverse Voltage
V_RRM
100
Reverse Voltage
V_R
75
Maximum Average Forward Rectified Current
Resistive Load f>50Hz
I_F(AV)
150
Peak Forward Surge Current
Half Sine-wave
8.3 ms
1 uS
I_FSM
500
2.0
Maximum Instantaneous Forward Voltage
@100mA
V_F
1.0
Maximum D.C. Reverse Current @ Tc=25 ^oC
25
VR=20V at Rated DC Blocking Voltage
I_R
@ Tc=125 ^oC VR=20V
50
Typical Reverse Recovery Time(Note 2)
TJ=25 ^oC
Trr
5.0
Typical Junction Capacitance (Note 1)
Cj
1.65
1.60
Typical Thermal Resistance
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
R_θJA
R_θJC
P_D
TJ
TSTG
190
150
80
60
500
-65 to + 200
-65 to + 200
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, Recover to 0.25A.
Units
V
V
mA
mA
A
V
nA
uA
nS
pF
o_C/W
mW
o_C
o_C
- 608 -
Version: B07