TS2N2222A Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – General Purpose NPN Transistor

TS2N2222A
General Purpose NPN Transistor
Pin assignment:
1. Base
2. Emitter
3. Collector
BV_CEO = 40V
Ic = 600mA
V_{CE (SAT)}, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Driver stage of AF amplifier_.
General purpose switching application
Structure
Epitaxial planar type.
Ordering Information
Part No.
TS2N2222ACX RF
Packing Package
3kpcs / Reel SOT-23
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 380uS, Duty <= 2%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
60V
40V
6
0.6
225
+150
- 55 to +150
Unit
V
V
V
A
mW
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Symbol Min
Static
Collector-Base Voltage
I_C = 100uA, I_E = 0
BV_CBO
60
Collector-Emitter Breakdown Voltage I_C = 1mA, I_B = 0
BV_CEO
40
Emitter-Base Breakdown Voltage
I_E = 10uA, I_C = 0
BV_EBO
6
Collector Cutoff Current
V_CB = 20V, I_E = 0
I_CBO
--
Emitter Cutoff Current
V_EB = 4V, I_C = 0
I_EBO
--
Collector-Emitter Saturation Voltage I_C / I_B = 150mA / 15mA
V_CE(SAT)1
--
Collector-Emitter Saturation Voltage I_C / I_B = 500mA / 50mA
V_CE(SAT)2
--
DC Current Transfer Ratio
V_CE = 1V, I_C = 0.15A
h_FE
100
Transition Frequency
V_CE =10V, I_C=20mA, f=100MHz
f_T
--
Output Capacitance
V_CB = 5V, f=1MHz
Cob
--
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Typ
--
--
--
--
--
--
0.20
--
250
--
Max Unit
--
V
--
V
--
V
0.1
uA
0.1
uA
0.4
V
0.75 V
300
-- MHz
6.5
pF
TS2N2222A
1-1
2003/12 rev. A