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TS13009 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
TS13009
High Voltage NPN Transistor
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
400V
700V
12A
1.5V @ IC / IB = 12A / 3A
Features
● High Voltage
● High Speed Switching
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Part No.
TS13009CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current
DC
Pulse
VEBO
IC
Base Current
DC
IB
Pulse
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. PW = 300uS, Duty ≤2%
PD
TJ
TSTG
Limit
700V
400V
9
12
24
6
12
100
+150
- 55 to +150
Unit
V
V
V
A
A
W
oC
oC
1/5
Version: A07