TS13007B_10 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
TS13007B
High Voltage NPN Transistor
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
700V
8A
3V @ I_C / I_B = 8A / 2A
Features
● High Voltage
● High Speed Switching
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Part No.
TS13007BCZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Base Current
DC
I_B
Pulse
Total Power Dissipation @ T_C=25ºC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. P_W = 300uS, Duty ≤2%
P_TOT
T_J
T_STG
Limit
700V
400V
9
8
16
4
8
80
+150
- 55 to +150
Unit
V
V
V
A
A
W
o_C
o_C
1/5
Version: A07