TS13007 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13007
High Voltage NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = 400V
BV_CBO = 700V
Ic = 8A
V_{CE (SAT)}, = 3V @ Ic / Ib = 8A / 2A
Features
— Suitable for switching regulator and motor control
— High speed switching
Structure
— Silicon triple diffused type.
Ordering Information
Part No.
TS13007CZ
Packing
Tube
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Base Current
Collector Power Dissipation
Tc=25 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
I_B
P_D
T_J
T_STG
Electrical Characteristics (Ta = 25 ^oC unless otherwise noted)
Limit
700V
400V
9
8
16
4
80
+150
- 65 to +150
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
I_C = 10mA, I_B = 0
I_C = 10mA, I_E = 0
I_E = 1mA, I_C = 0
V_EB = 9V, I_C = 0
I_C / I_B = 2A / 0.4A
I_C / I_B = 5A / 1A
I_C / I_B = 8A / 2A
I_C / I_B = 2A / 0.4A
I_C / I_B = 5A / 1A
V_CE = 5V, I_C = 2A
V_CE = 5V, I_C = 5A
V_CE = 10V, I_C = 0.5A
V_CB = 10V, f = 0.1MHz
V_CC = 125V, I_C = 5A,
I_B1 = 1A, I_B2 = - 1A, R_L
= 50ohm
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol
BV_CBO
BV_CEO
BV_EBO
I_EBO
V_CE(SAT)1
V_CE(SAT)2
V_CE(SAT)3
V_BE(SAT)1
V_BE(SAT)2
h_{FE 1}
h_{FE 2}
f_T
Cob
t_ON
t_STG
t_f
Min
700
400
9
--
--
--
--
--
--
8
5
4
--
--
--
--
Typ
--
--
--
--
--
--
--
--
--
--
--
--
110
--
--
--
Package
TO-220
Unit
V
V
V
A
A
W
o_C
o_C
Max Unit
--
V
--
V
--
V
1
mA
1
2
V
3
1.2
1.6
V
60
30
-- MHz
--
pF
1.6 uS
3
uS
0.7 uS
TS13007
1-2
2003/12 rev. A