TS13005 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

ITO-220
TS13005
High Voltage NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = 400V
BV_CBO = 700V
Ic = 4A
V_{CE (SAT)}, = 1V @ Ic / Ib = 4A / 1A
Features
Ordering Information
High voltage_.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Part No.
TS13005CZ
TS13005CI
TS13005CP
Packing
Tube
T&R
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
DC
I_C
Pulse
Collector Power Dissipation
TO-220
P_D
ITO-220
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
T_J
T_STG
Electrical Characteristics (Ta = 25 ^oC unless otherwise noted)
Limit
700V
400V
9
4
8
2
1.5
1.3
+150
- 65 to +150
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
I_C = 10mA, I_B = 0
I_C = 10mA, I_E = 0
I_E = 1mA, I_C = 0
V_CB = 700V, I_E = 0
V_EB = 9V, I_C = 0
I_C / I_B = 4A / 1A
I_C / I_B = 1A / 0.2A
V_CE = 5V, I_C = 2A
V_CE = 10V, I_C = 0.5A
V_CB = 10V, f = 0.1MHz
V_CC = 125V, I_C = 2A,
I_B1 = 0.4A, I_B2 = - 0.4A,
R_L = 62.5ohm
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol Min Typ
BV_CBO
700
BV_CEO
400
BV_EBO
9
I_CBO
I_EBO
V_CE(SAT)1
V_CE(SAT)2
h_FE
8
f_T
4
Cob
65
t_ON
0.8
t_STG
t_f
Package
TO-220
ITO-220
TO-252
Unit
V
V
V
A
W
o_C
o_C
Max Unit
V
V
V
10
mA
1
mA
1
V
0.5
40
MHz
pF
uS
4
uS
0.9
uS
TS13005
1-1
2003/12 rev. B