TS13003B Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13003B
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 400V
BV_CBO = 700V
Ic = 1.5A
V_{CE (SAT)}, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
Ordering Information
High voltage_.
High speed switching
Structure
Silicon triple diffused type.
Part No.
TS13003BCT B0
TS13003BCT A3
Packing
Bulk Pack
Ammo Pack
NPN silicon transistor
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
Collector Current
DC
Pulse
V_EBO
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
T_STG
Electrical Characteristics (Ta = 25 ^oC unless otherwise noted)
Limit
700V
400V
9
1.5
3
0.6
+150
- 55 to +150
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
I_C = 10mA, I_B = 0
I_C = 10mA, I_E = 0
I_E = 1mA, I_C = 0
V_CB = 700V, I_E = 0
V_EB = 9V, I_C = 0
I_C / I_B = 1.5A / 0.5A
I_C / I_B = 0.5A / 0.1A
V_CE = 2V, I_C = 0.43A
V_CE = 2V, I_C = 1.0A
V_CE = 5V, I_C = 10uA
V_CE = 10V, I_C = 0.1A
V_CB = 10V, f = 0.1MHz
V_CC = 125V, I_C = 1A,
I_B1 = 0.2A, I_B2 = - 0.2A,
R_L = 125ohm
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol Min Typ
BV_CBO
700
--
BV_CEO
400
--
BV_EBO
9
--
I_CBO
--
--
I_EBO
--
--
V_CE(SAT)1
--
--
V_CE(SAT)2
--
--
23
--
h_FE
8
--
6
--
f_T
4
Cob
21
t_ON
1.1
t_STG
t_f
Package
TO-92
TO-92
Unit
V
V
V
A
W
o_C
o_C
Max Unit
--
V
--
V
--
V
10
uA
10
uA
3
V
0.8
40
40
40
MHz
pF
uS
4
uS
0.7
uS
TS13003B
1-3
2005/01 rev. A