TS13003A Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13003A
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 430V
BV_CBO = 800V
Ic = 1.5A
V_{CE (SAT)}, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
Ordering Information
High voltage.
High speed switching
Structure
Silicon triple diffused type.
Part No.
TS13003ACT B0
TS13003ACT A3
Packing
Bulk Pack
Ammo Pack
NPN silicon transistor
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
IC
Pulse
Collector Power Dissipation
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
TSTG
Electrical Characteristics (Ta = 25 ^oC unless otherwise noted)
Limit
800V
430V
9
1.5
3
0.6
+150
- 55 to +150
Parameter
Conditions
Static
Collector-Base Voltage
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10mA, IE = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
Emitter Cutoff Current
VEB = 9V, IC = 0
Collector-Emitter Saturation Voltage
IC / IB = 1.5A / 0.5A
IC / IB = 0.5A / 0.1A
DC Current Gain
Frequency
Output Capacitance
VCE = 10V, IC = 0.4A
VCE = 2V, IC = 1.0A
VCE = 5V, IC = 10uA
VCE = 10V, IC = 0.1A
VCB = 10V, f = 0.1MHz
Turn On Time
Storage Time
Fall Time
VCC = 125V, IC = 1A,
IB1 = 0.2A, IB2 = - 0.2A,
RL = 125ohm
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol Min Typ
BVCBO
800
--
BVCEO
430
--
BVEBO
9
--
ICBO
--
--
IEBO
--
--
V_CE(SAT)1
--
--
VCE(SAT)2
--
--
hFE
20
--
8
--
6
--
fT
4
Cob
21
tON
1.1
tSTG
tf
Package
TO-92
TO-92
Unit
V
V
V
A
W
o_C
o_C
Max Unit
--
V
--
V
--
V
10
uA
10
uA
3
V
0.8
40
40
40
MHz
pF
uS
4
uS
0.7
uS
TS13003A
1-1
2004/09 rev. B