TS13003 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TO-126
TS13003
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Emitter
BV_CEO = 400V
BV_CBO = 700V
Ic = 1.5A
V_{CE (SAT)}, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
— High voltage_.
— High speed switching
Structure
— Silicon triple diffused type.
— NPN silicon transistor
Ordering Information
Part No.
TS13003CT
TS13003CK
Packing
Bulk
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-92
TO-126
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
700V
400V
9
1.5
3
0.6
20
+150
- 55 to +150
Package
TO-92
TO-126
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
I_C = 5mA, I_B = 0
Collector-Emitter Breakdown Voltage
I_C = 5mA, I_E = 0
Emitter-Base Breakdown Voltage
I_E = 1mA, I_C = 0
Collector Cutoff Current
V_CB = 700V, I_E = 0
Emitter Cutoff Current
V_EB = 9V, I_C = 0
Collector-Emitter Saturation Voltage
I_C / I_B = 1.5A / 0.5A
I_C / I_B = 0.5A / 0.1A
DC Current Gain
V_CE = 2V, I_C = 0.5A
Frequency
V_CE = 10V, I_C = 0.1A
Output Capacitance
V_CB = 10V, f = 0.1MHz
Turn On Time
V_CC = 125V, I_C = 1A,
Storage Time
I_B1 = 0.2A, I_B2 = - 0.2A,
Fall Time
R_L = 125ohm
Note : pulse test: pulse width <=5mS, duty cycle <=10%
Symbol Min Typ Max Unit
BV_CBO
700
V
BV_CEO
400
V
BV_EBO
9
V
I_CBO
100 uA
I_EBO
10
uA
V_CE(SAT)1
3
V
V_CE(SAT)2
0.5
h_FE
8
40
f_T
4
MHz
Cob
21
pF
t_ON
1.1
uS
t_STG
4
uS
t_f
0.7 uS
TS13003
1-3
2003/12 rev. A