TS13002A Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13002A
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 400V
BV_CBO = 700V
Ic = 0.3A
V_{CE (SAT)}, = 1.5V @ Ic / Ib = 200mA / 20mA
Features
Ordering Information
 High voltage.
 High speed switching
Structure
 Silicon triple diffused type.
 NPN silicon transistor
Part No.
TS13002ACT B0
TS13002ACT A3
Packing
Bulk
AMMO pack
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Electrical Characteristics
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Limit
700V
400V
9
0.3
0.5
0.6
+150
- 55 to +150
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage
IC = 1mA, IE = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 1mA, IC = 0
VCB = 700V, IE = 0
Emitter Cutoff Current
VEB = 7V, IC = 0
Collector-Emitter Saturation Voltage
IC / IB = 200mA / 20mA
IC / IB = 100mA / 10mA
DC Current Gain
VCE = 10V, IC = 10uA
VCE = 10V, IC = 100mA
VCE = 10V, IC = 280mA
Frequency
VCE = 10V, IC = 0.1A
Output Capacitance
Turn On Time
Storage Time
Fall Time
VCB = 10V, f = 0.1MHz
VCC = 125V, IC = 100mA,
IB1 = IB2 = 20mA,
RL = 125ohm
Note : pulse test: pulse width <=5mS, duty cycle <=10%
Symbol Min
BVCBO
700
BVCEO
400
BVEBO
9
ICBO
--
IEBO
--
VCE(SAT)1
--
VCE(SAT)2
--
hFE1
15
hFE2
25
hFE3
12
fT
4
Cob
--
tON
--
tSTG
--
tf
--
Typ
--
--
--
--
--
--
--
--
--
--
--
21
1.1
--
--
Package
TO-92
TO-92
Unit
V
V
V
A
W
o_C
o_C
Max Unit
--
V
--
V
--
V
10
uA
10
uA
1.5
V
1.0
40
40
30
-- MHz
--
pF
--
µS
4
µS
0.7
µS
TS13002A
1-2
2004/08 rev. C