TS13002 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13002
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 400V
BV_CBO = 700V
Ic = 0.2A
V_{CE (SAT)}, = 0.5V @ Ic / Ib = 100mA / 10mA
Features
Ordering Information
High voltage.
High speed switching
Structure
Silicon triple diffused type.
Part No.
TS13002CT B0
TS13002CT A3
Packing
Bulk
AMMO pack
NPN silicon transistor
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
IC
Pulse
Collector Power Dissipation
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
TSTG
Electrical Characteristics (Ta = 25 ^oC unless otherwise noted)
Limit
700V
400V
9
0.2
0.5
0.6
+150
- 55 to +150
Parameter
Conditions
Static
Collector-Base Voltage
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 1mA, IE = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
Emitter Cutoff Current
VEB = 7V, IC = 0
Collector-Emitter Saturation Voltage
IC / IB = 200mA / 20mA
IC / IB = 100mA / 10mA
DC Current Gain
VCE = 10V, IC = 10uA
DC Current Gain
VCE = 10V, IC = 100mA
DC Current Gain
Frequency
VCE = 10V, IC = 200mA
VCE = 10V, IC = 0.1A
Output Capacitance
VCB = 10V, f = 0.1MHz
Turn On Time
Storage Time
Fall Time
VCC = 125V, IC = 100mA,
IB1 = IB2 = 20mA,
RL = 125ohm
Note : pulse test: pulse width <=5mS, duty cycle <=10%
Symbol Min
BVCBO
700
BVCEO
400
BVEBO
9
ICBO
--
IEBO
--
V_CE(SAT)1
--
VCE(SAT)2
--
hFE
10
hFE
20
hFE
10
fT
4
Cob
--
tON
--
tSTG
--
tf
--
Typ
--
--
--
--
--
--
--
--
--
--
--
21
1.1
--
--
Package
TO-92
TO-92
Unit
V
V
V
A
W
o_C
o_C
Max Unit
--
V
--
V
--
V
100 uA
10
uA
2.5
V
0.5
40
40
40
-- MHz
--
pF
--
uS
4
uS
0.7
uS
TS13002
1-1
2004/06 rev. A