TS13001 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TS13001
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 400V
BV_CBO = 500V
Ic = 0.1A
V_{CE (SAT)}, = 0.5V @ Ic / Ib = 50mA / 10mA
Features
— High voltage_.
— High speed switching
Structure
— Silicon triple diffused type.
— NPN silicon transistor
Ordering Information
Part No.
TS13001CT
Packing
Bulk
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-92
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
500V
400V
9
0.1
0.3
0.6
+150
- 55 to +150
Package
TO-92
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
I_C = 10mA, I_B = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I_C = 10mA, I_E = 0
I_E = 1mA, I_C = 0
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V_CB = 500V, I_E = 0
V_EB = 7V, I_C = 0
I_C / I_B = 50mA / 10mA
DC Current Gain
Output Capacitance
V_CE = 5V, I_C = 20mA
V_CB = 10V, f = 0.1MHz
Storage Time
V_CE = 250V, I_C = 5 Ib,
Fall Time
Ib1=Ib2=40mA
Note : pulse test: pulse width <=5mS, duty cycle <=10%
Symbol Min Typ Max Unit
BV_CBO
500
--
--
V
BV_CEO
400
--
--
V
BV_EBO
9
--
--
V
I_CBO
--
--
100 uA
I_EBO
--
--
0.01 uA
V_CE(SAT)
--
--
0.5
V
h_FE
10
--
40
Cob
--
4
--
pF
ts
--
--
2.0
uS
tf
--
--
0.8
TS13001
1-2
2003/12 rev. B