TS12N30CS Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – DC-DC Converter Control and Synchronous AceFET

PRELIMINARY DATA SHEET
For information only
DC-DC Converter Control and Synchronous AceFET™
TS12N30CS – 30V Single N-Channel 4.5V Specified AceFET™
General Description
Taiwan Semiconductor’s new low cost,
state of the art AceFET™ lateral MOSFET
process technology in chipscale
bondwireless packaging minimizes PCB
space and RDS(ON) plus provides an ultra-
low Qg X RDS(ON) figure of merit.
D
Ds
G
S
Features
• 12A, 30V RDS(ON) = 6m at 4.5 Volts
• 12A, 30V Qg
= 15nC at 4.5 Volts
• Low profile package: less than 1mm height
when mounted on PCB
• Occupies only 1/3 the area of SO-8.
• Excellent thermal characteristics.
• High power and current handling capability.
• Lead free solder balls available.
AceFET™ for High Frequency
DC-DC Converters
Patent Pending
DS D S D S
S DS DS D
DS D SD G
S D S D S Ds
D S DS D S
SD SD S D
Bottom: Bump Side
Absolute Maximum Ratings
Symbol Parameter
TA=25°C unless otherwise noted
Ratings
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
30
+12
6
25
2.2
-55 to +150
Units
V
V
A
W
ºC
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJR
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
1
56
°C/W
4.5
0.6
6/19/03 Rev0