TPAU3D Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 3A, 200V - 600V Avalanche High Efficienct Recovery Surface Mount Rectifiers

TPAU3D - TPAU3J
Taiwan Semiconductor
CREAT BY ART
3A, 200V - 600V Avalanche High Efficienct Recovery Surface Mount Rectifiers
FEATURES
- Very low profile, typical height of 1.1mm
- Excellent high temperature stability
- Glass passivated chip junction
- Controlled avalanche characteristics
- Low leakage current
- High forward surge capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-277A (SMPC)
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 95 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL TPAU3D TPAU3G TPAU3J
Marking code
AU3D
AU3G
AU3J
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
V_RRM
200
400
600
I_F(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
50
Maximum instantaneous forward voltage
(1)
I_F=3A
T_J=25°C
T_J=125°C
Maximum reverse current
Rated V_R
T_J=25°C
T_J=125°C
Non-repetitive avalanche energy
I_AS = 2.5A Max
I_AS = 1.0A Typ
Maximum reverse recovery time
I_F=0.5A, I_R=1A, I_RR=0.25A
Typical thermal resistance
Typical junction capacitance ⁽⁴⁾
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V_F
I_R
E_AS
t_rr
R_θJM ⁽²⁾
R_θJA ⁽³⁾
C_J
T_J
T_STG
TYP
MAX
1.50
1.88
1.10
1.35
0.40
10
70
250
20
30
TYP
MAX
65
75
43
78
60
- 55 to +175
- 55 to +175
Note 2: Junction to mounted, mounted on FR4 PCB with 16mm x 16mm Cu pad area
Note 3: Free air, mounted on recommended pad
Note 4: Measured at 1 MHz and Applied V_R=4.0 V
UNIT
V
A
A
V
μA
mJ
ns
°C/W
pF
°C
°C
Document Number: DS_D0000011
Version: A15