TESDUB5V0 Datasheet, PDF (1/3 Pages) Taiwan Memory Technology – Small Signal Product

TESDUB5V0/12V/24V
Taiwan Semiconductor
Small Signal Product
Bi-directional ESD Protection Diodes
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Protects one Bi-directional I/O lines
- Low clamping voltage
- Working Voltage : 5, 12 and 24V
- High component density
MECHANICAL DATA
Case : 0603-B standard package molded plastic
Terminals : Gold plated, solderable per MIL-STD-750, method 2026
Weight : 0.003g (approximately)
0603-B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
TYP
MAX
TESDUB5V0
5.1
7
-
Diode breakdown voltage
TESDUB12V
IR=1mA
V_BO
13
17
-
TESDUB24V
25
28
-
TESDUB5V0
VR=5V
-
0.1
2
Leakage current
TESDUB12V
VR=12V
I_L
TESDUB24V
VR=24V
Junction capacitance
TESDUB5V0
TESDUB12V
TESDUB24V
VR=0V,
f=1MHz
-
15
20
C_T
12
-
10
-
ESD capability
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
ESD
15
8
UNITS
V
μA
pF
KV
TESDUB5V0
I_PP=5A, T_P=8/20us
-
-
15
Clamping voltage
TESDUB12V
I_PP=1A, T_P=8/20us
Vc
V
25
Peak pulse power
Junction temperature range
Storage temperature range
TESDUB24V
TESDUB5V0
TESDUB12V
TESDUB24V
I_PP=1A, T_P=8/20us
T_P=8/20us
P_PP
T_J
T_STG
47
-
-
75
25
W
47
-55 to + 125
°C
-55 to + 150
°C
Document Number：DS_S1312002
Version : B13