TESDQ5V0_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Bi-directional ESD Protection Diode

Small Signal Product
TESDQ5V0
Taiwan Semiconductor
Bi-directional ESD Protection Diode
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50μs)
- 100W peak pulse power per line (tp=8/20μs)
- Protects one bi-directional I/O line
- Working Voltage: 5V
- Packing code with suffix "G" means
green compound (halogen free)
DFN1006 (0402)
MECHANICAL DATA
- Case: DFN1006 (0402)
- Molding compound flammability rating: UL 94V-0
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- High temperature soldering guaranteed : 260^oC/10s
- Weight: 0.5 mg (approximately)
- Marking code: M
APPLICATIONS
-Cell Phone Handsets and Accessories
-Notebooks, Desktops, and Servers
-Keypads, Side Keys, LCD Displays
-Portable Instrumentation
-Touch Panel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Pulse Power (tp=8/20μs waveform)
P_PP
100
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
V_ESD
± 15
±8
Junction and Storage Temperature Range
T_J , T_STG
-55 to +150
UNIT
W
KV
o_C
PARAMETER
Stand-Off Voltage
Reverse Breakdown Voltage
I_R = 1 mA
Reverse Leakage Current
V_RWM = 5 V
Clamping Voltage
I_PP = 1 A
I_PP = 2 A
Junction Capacitance
V_R = 0 V , f = 1.0 MHz
SYMBOL
V_WM
V_(BR)
I_R
V_C
C_J
MIN
-
6
-
-
-
MAX
5
-
1
12.5
20
10
UNIT
V
V
μA
V
pF
Document Number: DS_S1412016
Version: D14