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TESDF5V0A_15 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Bi-directional ESD Protection Diode
Small Signal Product
TESDF5V0A
Taiwan Semiconductor
Bi-directional ESD Protection Diode
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns)
- Meet IEC61000-4-5 (Lightning) rating. 12A (8/20μs)
- Protects two directional I/O lines
- Working voltage: 5V
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 8 ± 0.5 mg
- Marking code: L50
SOT-23
APPLICATIONS
- Cell Phone Handsets and Accessories
- Microprocessor Based Equipment
- Industrial Controls
- Notebooks, Desktops, and Servers
- Set-Top Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Pulse Power (tp=8/20μs waveform)
Peak Pulse Current (tp=8/20μs)
PPP
100
IPP
2.5
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
VESD
± 15
±8
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
IR = 1 mA
VR = 5 V
IPP = 1 A
IPP = 2.5 A
VR = 0 V , f = 1.0 MHz
SYMBOL
VRWM
V(BR)
IR
VC
CJ
MIN
MAX
-
5
6
-
-
1
-
9.8
-
15
10
UNIT
W
A
KV
oC
UNIT
V
V
μA
V
pF
Document Number: DS_S1501018
Version: C15