TESDD5V0 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Bi-directional ESD Protection Diode

Small Signal Diode
TESDD5V0
Bi-directional ESD Protection Diode
SOD-523F
Features
—Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
—Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs)
—Protects one birectional I/O line
—Working Voltage : 5V
—Pb free version, RoHS compliant, and Halogen free
Mechanical Data
—Case : SOD-523F flat lead small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Mounting position: Any
—Weight :2 mg (approximately)
—Marking Code : DT
Dimensions
A
B
C
D
E
F
Unit (mm)
Min Max
0.70 0.90
1.50 1.70
0.25 0.35
1.10 1.30
0.60 0.70
0.10 0.14
Unit (inch)
Min Max
0.028 0.035
0.059 0.067
0.010 0.014
0.043 0.051
0.024 0.028
0.004 0.006
Applications
—Cell Phone Handsets and Accessories
—Notebooks, Desktops, and Servers
—Keypads, Side Keys, USB 2.0, LCD Displays
—Portable Instrumentation
—Microprocessor based equipment
Ordering Information
Part No. Package Packing Packing Code Marking
TESDD5V0 SOD-523F 3K / 7" Reel
RKG
DT
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Pin Configutation
Suggested PAD Layout
1.00
1.80
0.40
0.40
Unit : mm
Maximum Ratings
Type Number
Peak Pulse Power (tp=8/20μs waveform)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Junction and Storage Temperature Range
Symbol
PPP
VESD
TJ, TSTG
Value
100
±15
±8
-55 to + 150
.
.
Units
W
KV
°C
Electrical Characteristics
Type Number
Reverse Stand-Off Voltage
Reverse Breakdown Volta
Reverse Leakage Curren
Clamping Voltage
Junction Capacitance
IR=
1mA
VR=
5V
I_PP=
1A
I_PP=
3A
VR=0V, f=1.0MHz
Symbol
VRWM
V(BR)
IR
Vc
CJ
Min
Max
-
5
6
-
-
1
-
9.8
-
15
13 (Typ.)
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Units
V
V
uA
V
pF
Version : C11