TESDC24V_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Bi-directional TVS Diode Array

Small Signal Product
Bi-directional TVS Diode Array
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns)
- Protects one Bi-directional I/O line
6
3
5
- Working Voltage : 24V
4
- Pb free version, RoHS compliant, and Halogn free
TESDC24V
Taiwan Semiconductor
3
MECHANICAL DATA
- Case: SOD-323 small outline plastic package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 48±5 mg (approximately)
- Terminal : Matte tin plated, lead free,
solderable per MIL-STD-202, method 208 guaranteed
- Mounting position : Any
SOD-323
APPLICATION
- Cell Phone Handsets and Accessories
- Notebooks, Desktops, and Servers
- Keypads, Side Keys
- Portable Instrumentation
- Microprocessor Based Equipment
- Peripherals
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
IEC61000-4-2 ESD Voltage
JESD22-A114-B ESD Voltage
Air model
Contact Model
Per Human Body Model
V_ESD
(Note 1)
ESD Voltage
Machine Model
Peak Pulse Power
P_PP (Note 2)
Junction Temperature
T_J
Storage Temperature Range
T_STG
Note 1: Devide stressed with ten repetitive ESD pulses, per channel(I/O to GND)
± 15
±8
-
-
500
150
-55 ~ 150
UNIT
kV
W
o_C
o_C
PARAMETER
SYMBOL
MIN
Reverse Stand-Off Voltage
V_RWM
(Note 1)
Reverse Breakdown Voltage I_R = 1 mA
Reverse Leakage Current
V_R = 24 V
Clamping Voltage
I_PP = 5 A
I_PP = 17 A
Junction Capacitance
V_R = 0 V , f = 1.0 MHz
Note 1: Other voltages available upon request
V_(BR)
I_R
V_C
(Note 2)
C_J
26.7
Note 2: Non-repetitive currect pulse 8/20μs exponential decay waveform according to IEC61000-4-5
Note 3: Per channel(I/O to GND unless otherwise specified)
VALUE
MAX
24
1
40
52
50 (Typ.)
UNIT
V
V
µA
V
pF
Document Number: DS_S1405025
Version: E14