SS22L_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Schottky Barrier Rectifier

CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS22L thru SS215L
Taiwan Semiconductor
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SS SS SS SS SS SS
SYMBOL
22L 23L 24L 25L 26L 29L
Marking code
22L 23L 24L 25L 26L 29L
Maximum repetitive peak reverse voltage
V_RRM
20 30 40 50 60 90
Maximum RMS voltage
V_RMS
14 21 28 35 42 63
Maximum DC blocking voltage
V_DC
20 30 40 50 60 90
Maximum average forward rectified current
I_F(AV)
2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
50
SS SS
210L 215L
20L 2AL
100 150
70 105
100 150
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@ 2A
V_F
0.50
0.70
0.85
0.95
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=100 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJL
R_θJA
T_J
T_STG
0.4
15
-
- 55 to +125
0.1
10
-
-
5
10000
17
75
- 55 to +150
- 55 to +150
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1308031
Version: L13