SS12_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Schottky Barrier Rectifier

CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS12 thru SS115
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.066 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SS SS SS SS SS SS
SYMBOL
12 13 14 15 16 19
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
20 30 40 50 60 90
14 21 28 35 42 63
20 30 40 50 60 90
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
40
SS
110
100
70
100
Maximum instantaneous forward voltage (Note 1)
@ 1 A, T_J=25℃
@ 1 A, T_J=100℃
V_F
0.5
0.75
0.8
0.4
0.65
0.7
Maximum reverse current @ rated VR
T_J=25 ℃
T_J=100℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
I_R
dV/dt
0.2
0.1
6
5
-
-
-
2
10000
Typical thermal resistance
R_θJL
28
R_θJA
88
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T_J
T_STG
- 55 to +125
- 55 to +150
- 55 to +150
SS
115
150
105
150
0.95
0.85
UNIT
V
V
V
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1309022
Version: M13