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SS12L_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Schottky Barrier Rectifier
CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SS12L thru SS115L
Taiwan Semiconductor
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SS SS SS SS SS SS
SYMBOL
12L 13L 14L 15L 16L 19L
Marking code
12L 13L 14L 15L 16L 19L
Maximum repetitive peak reverse voltage
VRRM
20 30 40 50 60 90
Maximum RMS voltage
VRMS
14 21 28 35 42 63
Maximum DC blocking voltage
VDC
20 30 40 50 60 90
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
SS SS
110L 115L
10L A5L
100 150
70 105
100 150
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
VF
0.385 0.43 0.51
0.58
0.45 0.50 0.55
0.70
0.70
0.75
V
0.80
0.90
Maximum reverse current @ rated VR TJ=25 ℃
TJ=100 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJL
RθJA
TJ
TSTG
0.4
0.05
8.0
6.0
-
-
0.5
10000
45
100
- 55 to +125
- 55 to +150
- 55 to +150
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308028
Version: N13