SRT12_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Schottky Barrier Rectifier

CREAT BY ART
FEATURES
Schottky Barrier Rectifier
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SRT12 thru SRT115
Taiwan Semiconductor
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SRT SRT SRT SRT SRT SRT SRT SRT
SYMBOL
12 13 14 15 16 19 110 115
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
20 30 40 50 60 90 100 150
14 21 28 35 42 63 70 105
20 30 40 50 60 90 100 150
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
25
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
0.55
0.70
0.80
0.90 V
Maximum reverse current @ rated VR
T_J=25 ℃
T_J=100℃
T_J=125 ℃
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Measured at 1.0 MHz and Applied V_R=4.0 Volts
I_R
Cj
R_θJA
T_J
T_STG
0.5
10
-
110
- 55 to +125
0.1
5
-
-
2
80
28
50
- 55 to +150
- 55 to +150
mA
pF
O_C/W
O_C
O_C
Document Number: DS_D1308042
Version: H13