SRAS820_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Schottky Barrier Rectifiers

SRAS820 thru SRAS8150
Taiwan Semiconductor
CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifiers
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-263AB (D²PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 1.37 g (approximately)
TO-263AB (D²PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SRAS SRAS SRAS SRAS SRAS SRAS SRAS SRAS
SYMBOL
820 830 840 850 860 890 8100 8150
Maximum repetitive peak reverse voltage
V_RRM
20 30 40 50 60 90 100 150
Maximum RMS voltage
V_RMS
14 21 28 35 42 63 70 105
Maximum DC blocking voltage
V_DC
20 30 40 50 60 90 100 150
Maximum average forward rectified current
I_F(AV)
8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
Unit
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
I_F= 8 A
V_F
0.55
0.70
0.95
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=100 ℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJC
T_J
T_STG
5
-
- 55 to +125
0.1
-
5
10000
3
- 55 to +150
- 55 to +150
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1309054
Version: I13