SRAF820_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Isolated Schottky Barrier Rectifiers

SRAF820 thru SRAF8150
Taiwan Semiconductor
FEATURES
CREAT BY ART
Isolated Schottky Barrier Rectifiers
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SRAF SRAF SRAF SRAF SRAF SRAF
SYMBOL
820 830 840 850 860 890
Maximum repetitive peak reverse voltage
V_RRM
20
30
40
50
60
90
Maximum RMS voltage
V_RMS
14
21
28
35
42
63
Maximum DC blocking voltage
V_DC
20
30
40
50
60
90
Maximum average forward rectified current
I_F(AV)
8
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I_FSM
150
SRAF
8100
100
70
100
SRAF
8150
150
105
150
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
IF= 8A
V_F
0.55
0.70
0.85
0.95 V
Maximum reverse current @ Rated V_R
T_J=25 ℃
T_J=100℃
T_J=125 ℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJC
T_J
T_STG
0.5
15
-
- 55 to +125
0.1
10
-
5
10000
5
- 55 to +150
- 55 to +150
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1309006
Version: H13