SR1502_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Schottky Barrier Rectifier

FEATURES
CREAT BY ART
Schottky Barrier Rectifier
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- For use as Bypass diode in Solar application.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
R-6
MECHANICAL DATA
Case: R-6
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.7 g (approximately)
SR1502 thru SR1504
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL SR1502
SR1503
SR1504
Maximum repetitive peak reverse voltage
V_RRM
20
30
40
Maximum RMS voltage
V_RMS
14
21
28
Maximum DC blocking voltage
V_DC
20
30
40
Maximum average forward rectified current
I_F(AV)
15
Repetitive peak forward current f > 15Hz
I_FRM
60
Peak forward surge current, 50/60 Hz single half
sine-wave superimposed on rated load (JEDEC
I_FSM
Method )
300 / 340
Rating for fusing t < 10ms
Maximum instantaneous forward voltage @5 A
(Note 1)
@15 A
Maximum DC reverse current
at rated DC blocking voltage
@T_J=25 ℃
@T_J=100 ℃
Typical thermal resistance
Junction temperature range
- in DC forward mode
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I²t
V_F
I_R
R_θJL
R_θJA
T_J
T_STG
390
0.45
0.55
500
20
2.5
25
- 50 to +150
<=200
- 55 to +175
UNIT
V
V
V
A
A
A
A²s
V
μA
mA
O_C/W
O_C
O_C
Document Number: DS_D1308047
Version: F13