SMAJ530 Datasheet, PDF (1/2 Pages) General Semiconductor – SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR

SMAJ530 THRU SMAJ550
Surface Mount TransZorb^TM Transient Voltage Suppressors
Voltage Range
530 to 550 Volts
300 Watts Peak Power
Features
SMA/DO-214AC
a Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
a Protects power IC controllers such as TOPSwitch®
a Excellent clamping capability
a Glass passivated junction
a High temperature soldering guaranteed: 260+ / 10 seconds
at terminals
a Available in unidirectional only
Mechanical Data
.062(1.58)
.056(1.43)
.111(2.83)
.102(2.58)
.187(4.75)
.167(4.25)
a Case: JEDEC DO-201AC molded plastic body over
passivated junction
a Terminals: Solder plated, solderable per MIL-STD-
750, Method 2026
a Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
a Mounting position: Any
a Weight: 0.002 ounce, 0.064 gram
.103(2.61)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics TA= 25+ Unless Otherwise Noted.
Type Number
Symbol SMAJ530 SMAJ550 Units
Device Marking Code
HD
SB
Peak Pulse Power Dissipation (Note 1, 2 Fig. 1)
Steady State Power Dissipation at TL=75 ^OC
P_PPM
P_M(AV)
Minimum 300
1.0
Watts
Watts
Stand-off Voltage
Typical Thermal resistance Junction-to-lead
Typical Thermal Resistance Junction-to-ambient
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Minimum Breakdown Voltage at 100uA
Max. Clamping Voltage at 400mA,
10/1000uS-Waveform
Maximum DC Reverse Leakage Current at V_WM
Typical Temperature Coefficient of V_BR
Typical Capacitance (Note 3) at 0V
200V
V_WM
R JL
R JA
T_J, T_STG
Symbol
V_(BR)
V_C
I_D
C_J
477
495
27
75
-55 to + 150
SMAJ530 SMAJ550
530
550
760
5.0
650
90
7.5
V
+/W
+/W
+
Units
V
V
uA
mV+
pF
Notes: 1. Non Repetitive Current Pulse per Fig. 3 and Derated above 25^OC per Fig. 2.
2. Peak Pulse Power Waveform is 10 / 1000uS.
3. Measured at 1MHz.