SK82C_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Schottky Barrier Rectifier

SK82C thru SK810C
Taiwan Semiconductor
CREAT BY ART
FEATURES
Surface Mount Schottky Barrier Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.21 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SK
SYMBOL
82C
SK
83C
SK
84C
SK
85C
SK
86C
Maximum repetitive peak reverse voltage
V_RRM
20
30
40
50
60
Maximum RMS voltage
V_RMS
14
21
28
35
42
Maximum DC blocking voltage
V_DC
20
30
40
50
60
Maximum average forward rectified current
I_F(AV)
8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
SK
810C
100
70
100
Maximum instantaneous forward voltage (Note 1)
I_F= 8 A
V_F
0.55
0.75
0.90
Maximum reverse current @ rated VR T_J=25 ℃
T_J=100℃
Voltage rate of change (Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
dV/dt
R_θJA
T_J
T_STG
0.5
15
10
10000
20
-55 to +125
-55 to +150
- 55 to +150
Unit
V
V
V
A
A
V
mA
V/μs
O_C/W
O_C
O_C
Document Number: DS_D1309051
Version: G13