SK32A_11 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 3.0AMPS Surface Mount Schottky Barrier Rectifiers

CREAT BY ART
Pb
RoHS
COMPLIANCE
SK32A - SK320A
3.0AMPS Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
Features
— UL Recognized File # E-326243
— Low power loss, high efficiency
— Metal to silicon rectifier, majority carrier conduction
— High surge current capability, Low VF,
Easy pick and place
— Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
— Epitaxial construction
— Guard-ring for transient protection
— High temperature soldering guaranteed:
260℃/10s at terminals
— Meet MSL level 1, per J-STD-020D
lead free, maximum peak of 260℃
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: SMA/DO-214AC
Dimensions in inches and (millimeters)
Marking Diagram
— Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
— Polarity: Indicated by cathode band
SK3XA = Specific Device Code
G
= Green Compound
Y
= Year
— Packaging: 16mm tape per EIA STD RS-481
— Weight: 0.07 gram
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Symbol
SK
32A
SK
33A
SK
34A
SK
35A
SK
36A
SK SK SK SK
39A 310A 315A 320A
Unit
V_RRM
20
30
40
50
60
90 100 150 200
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
V_RMS
14
21
28
35
42
63
70
105 140
V
V_DC
20
30
40
50
60
90 100 150 200
V
Maximum Average Forward Rectified Current
I_F(AV)
3.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
I_FSM
70
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 3.0A
V_F
0.55
0.75
0.85
0.95
V
Maximum Reverse Current @ Rated VR T_A=25 ℃
0.5
0.1
T_A=100 ℃
I_R
10
5.0
-
T_A=125℃
-
0.5
Typical Junction Capecitance (Note 2)
C_j
600
290
110
Typical Thermal Resistance
R_θjL
R_θjA
28
88
Operating Temperature Range
T_J
- 65 to + 150
Storage Temperature Range
T_STG
- 65 to + 150
Note 1: Pulse Test with PW=300 usec, 1% Duty Cylcle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
mA
pF
O_C/W
O_C
O_C
Version:I11