SFT11G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated Super Fast Rectifiers

CREAT BY ART
FEATURES
Glass Passivated Super Fast Rectifiers
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SFT11G thru SFT18G
Taiwan Semiconductor
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SFT SFT SFT SFT SFT SFT
SYMBOL
11G 12G 13G 14G 15G 16G
SFT
17G
SFT
18G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
50 100 150 200 300 400 500 600
1
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
0.95
1.3
1.7
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
R_θJA
T_J
T_STG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
100
35
20
10
100
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1312029
Version: H13