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SFAD501G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 5.0 AMPS. Glass Passivated Super Fast Rectifiers
SFAD501G THRU SFAD508G
5.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
5.0 Amperes
Features
Ultrafast Recovery
Low forward voltage drop
High current capability
High reliability
High surge current capability
.250(6.55)
.246(6.45)
.211(5.36)
.207(5.26)
DPAK
.093(2.35)
.089(2.25)
Marking
05
.013(0.54)
.011(0.48)
05
Mechanical Data
Case: Epoxy molded
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds.
Weight: 0.4 grams
.024(0.60)
.031(0.80)
.211(5.36)
.207(5.26)
30 5
.013(0.54)
.011(0.48)
.053(1.30)
.045(1.10)
.112(2.85)
.092(2.35)
.059(1.45)
.039(0.95)
123
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SFAD SFAD SFAD SFAD SFAD SFAD SFAD SFAD Units
501G 502G 503G 504G 505G 506G 507G 508G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 350 480 V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 500 600 V
Maximum Average Forward Rectified
Current @TC = 100℃
I(AV)
5.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
55
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@5.0A
VF
1.3
1.7
1.8
V
Maximum DC Reverse Current
@ TA=25℃ at Rated DC Blocking Voltage
IR
@ TA=125℃
100
µA
2.0
mA
Maximum Reverse Recovery Time (Note 1) Trr
35
nS
Typical Thermal Resistance (Note 3)
RθJC
9.0
℃/W
Typical Junction Capacitance (Note 2)
Cj
50
30
pF
Operating Temperature Range
TJ
-65 to +150
℃
Storage Temperature Range
TSTG
-65 to +150
℃
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case Mounted on Hestsink.
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