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S3AB_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Rectifiers
CREAT BY ART
Surface Mount Rectifiers
S3AB thru S3MB
Taiwan Semiconductor
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
S3 S3 S3 S3 S3 S3
SYMBOL
AB BB DB GB JB KB
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800
Maximum RMS voltage
VRMS
35 70 140 280 420 560
Maximum DC blocking voltage
VDC
50 100 200 400 600 800
Maximum average forward rectified current
IF(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
Maximum instantaneous forward voltage (Note 1)
@3A
VF
1.15
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
Typical reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
RθjL
TJ
TSTG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
10
250
1.5
40
10
- 55 to +150
- 55 to +150
S3
MB
1000
700
1000
Unit
V
V
V
A
A
V
μA
μs
pF
OC/W
OC
OC
Document Number: DS_D1405060
Version: H14