RDBLS207G Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 2A, 1000V Fast Recovery Glass Passivated Bridge Rectifier

RDBLS207G
Taiwan Semiconductor
CREAT BY ART
2A, 1000V Fast Recovery Glass Passivated Bridge Rectifier
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBLS
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
RDBLS207G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Rating for fusing (t<8.3ms)
I²t
Maximum instantaneous forward voltage (Note 1)
I_F= 2 A
V_F
Maximum reverse recovery time (Note 2)
t_rr
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
I_R
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs,1% duty cycle
T_J
T_STG
Note 2: Reverse recovery time test conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
1000
700
1000
2
50
10.3
1.15
300
2
500
22
62
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A²s
V
ns
μA
°C/W
°C
°C
Document Number: DS_D0000152
Version: A15