RB751V-40_14 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

RB751V-40
Taiwan Semiconductor
Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability,low V_F
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finishwith Nickel(Ni) underplate
- Pb free version and ROHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
SOD-323
Case : SOD-323 small outline plastic package
Terminals : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260°C/10s
Polarity : Indicated by cathode band
Weight : 0.004grams (approximately)
Marking Code : 5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
P_D
200
Reverse voltage
V_R
30
Repetitive peak reverse voltage
Mean Forward Current @ 25^o C ( Lead Temperature )
V_RRM
40
Io
30
Non-repetitive peak forward surge current (Note 1)
I_FSM
0.2
Thermal resistance (Junction to Ambient) (Note 2)
R_θJA
500
Junction and storage temperature range
T_J , T_STG
-45 to + 125
UNITS
mW
V
V
mA
A
o_C/W
o_C
PARAMETER
SYMBOL
MIN
MAX
Forward voltage
Reverse leakage current
Junction capacitance
I_F=1.0mA
V_R=30V
V_R=1, f=1.0MHz
V_F
-
I_R
-
C_J
Notes : 1.Test Condition: 8.3ms single half sine-wave superimposed on rated load (JEDEC method)
Notes : 2. Valid provided that terminals are kept at ambient temperature
0.37
0.5
2
UNITS
V
μA
pF
Version : C14