RB751V-40WS_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low VF SMD Schottky Barrier Diode

Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level (MSL): 1
- Packing code with suffix "G" means
green compound (halogen-free)
RB751V-40WS
Taiwan Semiconductor
SOD-323F
MECHANICAL DATA
- Case : Flat lead SOD-323F small outline plastic package
- Molding compound, UL flammability classification rating 94V-0
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.6 ± 0.5 mg
- Marking Code : S8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
40
Reverse Voltage
V_R
30
Mean Forward Current
I_O
30
Non-Repetitive Peak Forward Surge Current
60Hz for 1 Cyc.
I_FSM
0.2
Thermal Resistance (Junction to Ambient)
(Note)
R_θJA
500
Junction and Storage Temperature Range
T_J ,T_STG
-40 to +125
PARAMETER
Forward Voltage
I_F = 1 mA
Reverse Leakage Current
V_R = 30 V
Junction Capacitance
V_R = 1V , f = 1.0 MHz
Note: Valid provided that electrodes are kept at ambient temeprature.
SYMBOL
V_F
I_R
C_J
TYP
-
-
2
MAX
0.37
0.5
-
UNIT
mW
V
V
mA
A
o_C/W
o_C
UNIT
V
μA
pF
Document Number: DS_S1411002
Version: C14