RB751V-40WS Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW, Low VF SMD Schottky Barrier Diode

Small Signal Diode
RB751V-40WS
200mW, Low VF SMD Schottky Barrier Diode
SOD-323F
B
Features
—Low power loss, high current capability, low V_F, low I_R
—Surface device type mounting
—Moisture sensitivity level 1
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : Flat lead SOD-323F small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Polarity : Indicated by cathode band
—Weight :4.6 ± 0.5 mg
—Marking Code : S8
Ordering Information
Package
Part No.
Packing
SOD-323F RB751V-40WS RR 3K / 7" Reel
SOD-323F RB751V-40WS RRG 3K / 7" Reel
Marking
S8
S8
C
A
D
E
F
Dimensions
A
B
C
D
E
F
Unit (mm)
Min Max
1.15 1.40
2.30 2.80
0.25 0.40
1.60 1.80
0.80 1.10
0.05 0.15
Unit (inch)
Min Max
0.045 0.055
0.091 0.110
0.010 0.016
0.063 0.071
0.031 0.043
0.002 0.006
Pin Configuration
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Dimensions
X
X1
Y
Value (in mm)
0.710
2.900
0.403
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Average Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Symbol
PD
VRRM
VR
IO
IFSM
RθJA
TJ
TSTG
Value
200
40
30
30
0.2
500
125
-40~125
Notes: 1. Test Condition : 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method)
2. ESD sensitive product hankling required.
3. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Units
mW
V
V
mA
A
°C/W
°C
°C
Version : B10