RB706F-40_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low VF SMD Schottky Barrier Diode

Small Signal
Features
◇ Low reverse current, high reliability
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇ Case : SOT-323 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Polarity : Indicated by cathode band
◇ Weight : 5 ± 0.5 mg
◇ Marking Code : ZA
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current ( t = 8.3 ms )
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_R
I_O
I_FSM
R_θJA
T_J
T_STG
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
I_R = 10 μA
Forward Voltage
I_F = 1 mA
Reverse Leakage Current
V_R = 10 V
Junction Capacitance
V_R = 1 V , f = 1.0 MHz
Symbol
V_(BR)
V_F
I_R
C_J
RB706F-40
Low V_F SMD Schottky Barrier Diode
SOT-323
Value
45
40
30
0.2
500
125
-55 to + 125
Min
Max
45
-
-
0.37
-
1
2 (TYP)
Units
V
V
mA
A
o_C/W
o_C
o_C
Units
V
V
μA
pF
Version : B14