RB495D_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – SMD Schottky Diode

Small Signal Product
SMD Schottky Diode
RB495D
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260^oC/10s
- Weight: 0.008g (approximately)
- Marking Code: D3Q
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
40
Reverse Voltage
V_R
25
Mean Forward Current
I_O
350
Non-Repetitive Peak Forward Surge Current
(Note 1)
I_FSM
1.5
Junction and Storage Temperature Range
T_J , T_STG
-40 to +125
PARAMETER
Reverse Breakdown Voltage
I_R=100μA
Forward Voltage
I_F=10mA
I_F=200mA
Reverse Leakage Current
V_R=25V
Junction Capacitance
V_R=0V, f=1.0MHz
Note 1: Mean output current per element : I_O/2
SYMBOL
V_(BR)
V_F
I_R
C_J
MIN
40
-
-
-
-
MAX
-
0.32
0.55
70
50
UNIT
mW
V
V
mA
A
o_C
UNIT
V
V
μA
pF
Document Number: DS_S1409009
Version: G14