MUR820_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated Super Fast Rectifiers

MUR820 - MUR860
8.0 AMPS. Glass Passivated Super Fast Rectifiers
TO-220AC
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: TO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds/.25”,(6.35mm) from case.
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
PIN1
2
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MUR820 MUR840 MUR860
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
200
400
600
140
280
420
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length (See Fig. 1)
I(AV)
200
400
600
8.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
IFSM
100
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 8.0A
Maximum DC Reverse Current @ TC=25 ^oC
at Rated DC Blocking Voltage @ TC=125 ^oC
(Note 4)
VF
0.975
1.30
1.7
5.0
IR
250
Maximum Reverse Recovery Time ( Note 2 )
Trr
25
50
Maximum Forward Recovery Time TFR
(IF=1.0A, di/dt = 50A/uS),
Tfr
35
50
Typical Thermal Resistance (Note 3)
Operating Temperature Range
R_θJC
TJ
3.0
2.0
-65 to +175
Storage Temperature Range
TSTG
-65 to +175
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, Mounted on Heatsink Size of 2” x 3” x 0.25”
Al-Plate.
4. Pulse lest: tp = 300 uS, Duty Cycle < 2%.
Units
V
V
V
A
A
V
uA
uA
nS
nS
o_C/W
o_C
o_C
Version: A06