MUR160_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated High Efficient Rectifiers

MUR160 thru MUR190
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated High Efficient Rectifiers
- Designed for use in switching power supplies,
'inverters and as free wheeling diodes
- High efficiency, Low VF
- Ultrafast recovery time for high efficiency
- 175℃ operating junction temperature
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MUR160
MUR190
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@1A
T_J=150℃
V_F
T_J=25℃
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 2)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
R_θjA
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
600
900
420
630
600
900
1
35
1.05
1.50
1.25
1.70
5
150
50
75
27
15
50
- 55 to +175
- 55 to +175
UNIT
V
V
V
A
A
V
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1405015
Version: J14