MUR160A_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1A, 600V - 900V Glass Passivated High Efficient Rectifiers

MUR160A - MUR190A
Taiwan Semiconductor
CREAT BY ART
1A, 600V - 900V Glass Passivated High Efficient Rectifiers
FEATURES
- Designed for use in switching power supplies,
inverters and as free wheeling diodes
- High efficiency, low VF
- High reliability
- Ultrafast recovery time for high efficiency
- 175°C operating junction temperature
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
MUR160A
MUR190A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
600
900
420
630
600
900
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
35
Maximum instantaneous forward voltage
@ 1 A (Note 1)
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
V_F
I_R
t_rr
C_J
R_θJA
T_J
T_STG
1.25
1.70
1.05
1.50
5
150
50
75
27
15
50
- 55 to +175
- 55 to +175
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D0000067
Version: E15