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MUR105S_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Ultrafast Power Rectifiers
MUR105S thru MUR160S
Taiwan Semiconductor
CREAT BY ART
Surface Mount Ultrafast Power Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Ultrafast recovery time for high efficiency
- Low forward voltage, low power loss
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
MUR MUR MUR MUR MUR MUR
SYMBOL
105S 110S 115S 120S 140S 160S
Maximum repetitive peak reverse voltage
VRRM
50
100 150 200 400 600
Maximum RMS voltage
VRMS
35
70
105 140 280 420
Maximum DC blocking voltage
VDC
50
100 150 200 400 600
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
35
Maximum instantaneous forward voltage (Note 1)
@ 1 A, TJ=25℃
VF
@ 1 A, TJ=150℃
Maximum reverse current @ rated VR TJ=25 ℃
TJ=150 ℃
IR
Maximum reverse recovery time (Note 2)
Trr
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
RθjL
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
0.875
1.25
0.710
1.05
2
5
50
150
25
50
17
- 55 to +175
- 55 to +175
Unit
V
V
V
A
A
V
μA
ns
OC/W
OC
OC
Document Number: DS_D1405061
Version: H14