MMBTA05_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Small Signal Product
MMBTA05
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260^oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 1H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Collector Base Voltage
V_CBO
60
Collector Emitter Voltage
V_CEO
60
Emitter Base Voltage
V_EBO
4
Collector Current- Continuous
I_C
0.5
Collector Power Dissipation
P_C
300
Junction Temperature
T_J
150
Storage Temperature Range
T_STG
- 55 to +150
PARAMETER
Collector Base Breakdown Voltage
at I_C=100uA, I_E=0
Collector Emitter Breakdown Voltage
at I_C=1mA, I_B=0
Emitter Base Breakdown Voltage
at I_E=100uA, I_C=0
Collector Cutoff Current
at V_CB=60V, I_E=0
Collector Cutoff Current
at V_CE=60V, I_B=0
Emitter Cutoff Current
at V_EB=3V, I_C=0
DC Current Gain
at V_CE=1V, I_C=10mA
at V_CE=1V, I_C=100mA
Collector Emitter
Saturation Voltage
at I_C=50mA, I_B=5mA
Base-emitter Voltage
Transition Frequency
at V_CE=1V, I_C=100mA
at V_CE=2V, I_C=10mA, f=100MHz
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
h_FE
V_CE(sat)
V_BE
f_T
MIN
60
60
4
-
-
-
100
100
-
-
100
MAX
-
-
-
0.1
0.1
0.1
400
-
0.25
1.2
-
UNIT
V
V
V
A
mW
°C
°C
UNIT
V
V
V
μA
μA
μA
V
V
MHz
Document Number: DS_S0000015
Version: B15