 English |
|
|
|
|
|
|
|
| MMBT3906 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP switching transistor | |||
| |||
|
Pb RoHS
COMPLIANCE
MMBT3906
0.3 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
 As complementary type, the NPN transistor
MMBT3904 is recommended
 Epitaxial planar die construction
 Marking: 2A
Dimensions in inches and (millimeters)
Maximum Ratings TA=25 oC unless otherwise specified
Type Number
Symbol
Value
Units
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector Power dissipation
ELECTRICAL CHARACTERISTICS
VCBO
-40
V
VCEO
-40
V
VEBO
-5
V
IC
-0.2
A
PC
0.3
W
Parameter
Symbol
MIN
MAX Units
Collector-base breakdown voltage IC=-10uA, Ie=0
Collector-emitter breakdown voltage IC=-1mA, IB=0
Emitter-base breakdown voltage
IE=-10uA, IC=0
Collector cut-off current
VCB=-40V IE=0
Collector cur-off current
VCE=-30V VBE(off)=-3V
Emitter cut-off current
VEB=--5V IC=0
DC current gain
VCE=-1V IC=-10mA
VCE=-1V IC=-50mA
VCE=-1V IC=-100mA
Collector-emitter saturation voltage IC=-50mA, IB=-5mA
Base-emitter saturation voltage
IC=-50mA, IB=-5mA
Transition frequency VCE=-20V IC=-10mA f=100MHz
Delay time
Rise time
VCC=-3V, VBE=-0.5V IC=-10mA
IB1 =-1.0mA
Storage time
VCC=-3V, IC=-10mA
Fall time
IB1= IB2=-1.0mA
Operating and Storage Temperature Range
V(BR)CBO
V(BR)CEO
VBE(ON)
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
TJ, TSTG
-40
-40
-5
-0.1
-50
-0.1
100
300
60
30
-0.4
-0.95
250
35
35
225
75
-55 to + 150
V
V
V
uA
nA
V
V
MHz
nS
nS
nS
nS
oC
CLASSIFICATION OF hFE1
Rank
O
Y
Range
100-200
200-300
Version: A07
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese