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| MMBT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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Pb RoHS
COMPLIANCE
MMBT3904
0.2 Watts NPN Plastic-Encapsulate Transistors
SOT-23
Features
 As complementary type, the PNP transistor
MMBT3906 is recommended
 Epitaxial planar die construction
 Marking: 1AM
Dimensions in inches and (millimeters)
Maximum Ratings TA=25 oC unless otherwise specified
Type Number
Symbol
Value
Units
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector Power dissipation
ELECTRICAL CHARACTERISTICS
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
0.2
A
PC
0.2
W
Parameter
Symbol
MIN
MAX Units
Collector-base breakdown voltage IC=10uA, Ie=0
Collector-emitter breakdown voltage IC=1mA, IB=0
Emitter-base breakdown voltage
IE=10uA, IC=0
Collector cut-off current
VCB=60V IE=0
Collector cut-off current
VCE=30V VBE(off)=3V
Emitter cut-off current
VEB=5V IC=0
DC current gain
VCE=1V IC=10mA
VCE=1V IC=50mA
VCE=1V IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
Transition frequency VCE=20V IC=10mA f=100MHz
Delay time
Rise time
VCC=3V VBE=0.5V IC=10mA
IB1= IB2=1.0mA
Storage time
VCC=3V IC=10mA
Fall time
IB1= IB2=1.0mA
Operating and Storage Temperature Range
V(BR)CBO
V(BR)CEO
VBE(ON)
ICBO
ICEO
IEEO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
TJ, TSTG
60
40
6
0.1
50
0.1
100
400
60
30
0.3
0.95
250
35
35
200
50
-55 to + 150
V
V
V
uA
nA
uA
V
V
MHz
nS
nS
nS
nS
oC
CLASSIFICATION OF hFE1
Rank
O
Y
G
Range
100-200
200-300
300-400
Version: A07
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