MMBT2907A_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 350mW, PNP Small Signal Transistor

Small Signal Product
Features
◇ Epitaxial planar die construction
◇ Surface device type mounting
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇ Case : SOT- 23 small outline plastic package
◇ Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
◇ High temperature soldering guaranteed : 260°C/10s
◇ Weight : 0.008 grams (approximately)
◇ Marking Code : 2F
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Symbol
Power Dissipation
P_D
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Junction and Storage Temperature Range
T_J , T_STG
Notes:1. Valid provided that electrodes are kept at ambient temperature
MMBT2907A
350mW, PNP Small Signal Transistor
SOT-23
Value
350
-60
-60
-5
-600
-55 to + 150
Units
mW
V
V
V
mA
°C
Version : B14