MCR100 Datasheet, PDF (1/3 Pages) Motorola, Inc – Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)

Small Signal Diode
MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8
Thyristors
DO-92
A
B
G
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : TO-92 plastic package
D
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Weight : 0.19gram (approximately)
High temperature soldering guaranteed: 260°C/10s
E
F
C
Ordering Information
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Part No.
MCR100-3 A1/A1G
MCR100-4 A1/A1G
MCR100-5 A1/A1G
MCR100-6 A1/A1G
MCR100-7 A1/A1G
MCR100-8 A1/A1G
Packing
4k/ box
4k/ box
4k/ box
4k/ box
4k/ box
4k/ box
Dimensions
A
B
C
D
E
F
G
Unit (mm) Unit (inch)
Min Max Min
4.50 4.70 0.177
4.50 4.70 0.177
12.50
0.35
3.50
1.00
0.29
0.45
3.70
1.20
0.39
0.492
0.013
0.137
0.039
0.011
Max
0.185
0.185
0.017
0.145
0.047
0.015
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Forward Current RMS(All Conduction Angles）
Peak Repetitive Forward and Reverse
Blocking Voltage（T_J=25℃ TO 125℃，
R_GK=1KΩ）
Peak Forward Surge Current，T_A=25℃
(1/2 Cycle，Sine Wave，60Hz）
Circuit Fusing Considerations（t= 8.3 ms）
Forward Peak Gate Power （T_A=25℃，PW≤1 us）
Forward Average Gate Power（T_A=25℃)
Forward Peak Gate Current（T_A=25℃，PW≤1 us）
Reverse Peak Gate Current（T_A=25℃，PW≤1 us）
Symbol
I_T(RMS)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
V_DRM and V_RRM
MCR100-7
MCR100-8
I_TSM
I²t
P_GM
P_GF(AV)
I_GFM
V_GRM
Value
0.8
100
200
300
400
500
600
10
0.415
0.1
0.01
1
5
Units
A
V
A
A²s
W
W
A
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version:B12